Deposition of Tungsten Silicide Films by the Chemical Vapor Reaction of Dichlorosilane and Tungstenhexafluoride : Condensed Matter

スポンサーリンク

概要

• 論文の詳細を見る

• High temperature chemical vapor deposition (CVD) of tungsten silicide (WSi_x) employing SiH_2Cl_2 (DCS) and WF_6 is studied. Deposition rate of 1450-1500 Å/min is held nearly constant at temperatures above 500℃. However, it decreases below 500℃ because the surface reaction is dominant. Si/W ratio (Si composition), x, of WSi_x increases with increasing deposition temperature. Resistivity decreases from 740 to 530 μΩ・cm with decreasing composition, x, from 2.38 to 2.15. Fluorine concentration of DCS WSi_x is around 1×10^<17> cm^<-3> and is about four orders lower than monosilane (MS) WSi_x.

• 社団法人応用物理学会の論文
• 1988-10-20

著者

• Hara Toru

  Electrical Engineering Hosei University

• Miyamoto Takaaki

  Electrical Engineering Hosei University

• Yokoyama Tadashi

  Electrical Engineering Hosei University

関連論文

• Deposition of Tungsten Silicide Films by the Chemical Vapor Reaction of Dichlorosilane and Tungstenhexafluoride : Condensed Matter

スポンサーリンク