Ultrahigh Resolution in Sputter Depth Profiling with Auger Electron Spectroscopy Using Ionized SF_6 Molecules as Primary Ions

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概要

• 論文の詳細を見る

• Depth profiling studies with Auger electron spectroscopy (AES) on a GaAs/AlAs multilayer structure using different sputtering gases (Ar, Xe, SF_6), ion energies of 500, 750 and 1000 eV and ion incidence angles of 70 and 85 deg show that ultrahigh depth resolution with △z = 1.6nm is obtained for SF_6 at 500 eV and 85 deg. Application of the mixing-roughness-information depth (MRI) model for quantitative profile evaluation reveals the various contributions of atomic mixing, roughness and information depth to the depth resolution. Although under optimum conditions the roughness is still predominant with an rms value of 0.7 nm, a record low value of 0.4 nm was found for the mixing zone length. This correponds to less than two monolayers and opens the way to layer-by-layer sputtering without atomic mixing.

• 社団法人応用物理学会の論文
• 1998-06-15

著者

• Rar A

  National Res. Inst. Ibaraki Jpn

• Rar Andrei

  National Research Institute For Metals

• Hofmann Siegfried

  National Research Institute For Metals

関連論文

• Ultrahigh Resolution in Sputter Depth Profiling with Auger Electron Spectroscopy Using Ionized SF_6 Molecules as Primary Ions
• Reduction and Removal of Thin Al Oxide Film from Cu Substrate by Focused Electron Beam

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