Structural Dependence of GaN/Al_2O_3 on Electric Bias During Electron-Cyclotron-Resonance Plasma-Excited Molecular Beam Epitaxy (ECR-MBE)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-06-15
著者
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Chiba Yasuo
Faculty Of Science And Technology Ritsumeikan University
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Nanishi Yasushi
Faculty Of Science And Technology Ritsumeikan University
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SHIMIZU Yuui
Faculty of Science and Technology, Ritsumeikan University
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TOMINARI Tatsuya
Faculty of Science and Technology, Ritsumeikan University
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HOKUTO Shingo
Faculty of Science and Technology, Ritsumeikan University
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Shimizu Yuui
Faculty Of Science And Technology Ritsumeikan University
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Hokuto Shingo
Faculty Of Science And Technology Ritsumeikan University
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Tominari Tatsuya
Faculty Of Science And Technology Ritsumeikan University
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Nanishi Yasushi
Faculty of Science and Engineering, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan
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NANISHI Yasushi
Faculty of Science and Engineering, Ritsumeikan University
関連論文
- Structural Dependence of GaN/Al_2O_3 on Electric Bias During Electron-Cyclotron-Resonance Plasma-Excited Molecular Beam Epitaxy (ECR-MBE)
- Temperature Dependence of Surface Acoustic Wave Propagation Velocity in In
- Temperature Dependence of Surface Acoustic Wave Propagation Velocity in In[x]Ga₁₋xN Films Obtained by High-Resolution Brillouin Spectroscopy : Determination of Temperature Coefficient of Frequency