Ion Energy Effects on Surface Chemistry and Damage in a High Density Plasma Etch Process for Gallium Arsenide

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概要

• 論文の詳細を見る

• Etch product chlorides from a gallium arsenide substrate subjected to a high density Cl_2/Ar plasma etching process have been sampled in situ to determine regions of process space commensurate with ion-driven surface chemistry. Experimental results show three distinct surface chemistry regimes as the ion energy is increased: thermal chemistry for energies < 50 eV, ion-assisted chemistry for energies of 50-200 eV, and sputtering for energies above 200 eV. Further, ion energies above 200 eV result in unrecoverable pinning of the surface Fermi level whereas at lower ion energies the surface Fermi level returns to the pre-etch condition with in situ Cl_2/Ar plasma passivations.

• 社団法人応用物理学会の論文
• 1998-05-15

著者

• Butler James

  U.s. Naval Research Laboratory Chemistry Division

• Katzer Daniel

  U.s. Naval Research Laboratory Chemistry Division

• LEONHARDT Darrin

  U.S. Naval Research Laboratory, Chemistry Division

• EDDY Jr.

  U.S. Naval Research Laboratory, Chemistry Division

• SHAMAMIAN Vasgen

  U.S. Naval Research Laboratory, Chemistry Division

• HOLM Ronald

  U.S. Naval Research Laboratory, Chemistry Division

• GLEMBOCKI Orest

  U.S. Naval Research Laboratory, Chemistry Division

• THOMS Brian

  U.S. Naval Research Laboratory, Chemistry Division

• Eddy Jr.

  U.s. Naval Research Laboratory Chemistry Division

• Holm Ronald

  U.s. Naval Research Laboratory Chemistry Division

• Thoms Brian

  U.s. Naval Research Laboratory Chemistry Division

• Glembocki Orest

  U.s. Naval Research Laboratory Chemistry Division

• Leonhardt Darrin

  U.s. Naval Research Laboratory Chemistry Division

• Shamamian V

  Naval Res. Lab. Washington D.c.

関連論文

• Ion Energy Effects on Surface Chemistry and Damage in a High Density Plasma Etch Process for Gallium Arsenide

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