Effects of Substrate Misorientation on the Formation and Characteristics of Self-Assembled InP/InGaP Quantum Dots
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-04-01
著者
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Kwon Yong-hwan
Department Of Physics Seoul National University
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Jeong W
Sungkyunkwan Univ. Suwon Kor
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Cho Yong-hoon
Department Of Physics Seoul National University
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Choe B‐d
Seoul National Univ. Seoul Kor
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CHOE Byung-Doo
Department of Physics, Seoul National University
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PARK Sang-Koo
Department of Materials Engineering, Sungkyunkwan University
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JEONG Weon
Department of Materials Engineering, Sungkyunkwan University
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Park Sang-koo
Department Of Materials Engineering Sungkyunkwan University
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Jeong Weon
Department Of Materials Engineering Sungkyunkwan University
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Choe Byung-doo
Department Of Material Physics Faculty Of Engineering Science Osaka University
関連論文
- Negative Resistance of AlGaAs Diodes Co-doped with Si and Mn
- Dependence of Anisotropic Strain Relaxation on Cormposition of Lattice-Mismatched InGaAsP
- Effects of Substrate Misorientation on the Formation and Characteristics of Self-Assembled InP/InGaP Quantum Dots
- Optical Characteristics of InAs/InGaAsP/InP Self-Assembled Quantum Dots Emitting at 1.4-1.6μm
- Power Losses of Ni-Substituted Mn-Zn Ferrites
- Epitaxial Growth of Indium Phosphide in an Open Flow System