Evolution of Surface Morphology and Strain in Low-Temperature AlN Grown by Plasma-Assisted Molecular Beam Epitaxy

概要

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The evolution of stress-driven surface roughening in low-temperature (LT) grown AlN has been investigated in a wide range of film thicknesses using plasma assisted molecular beam epitaxy and atomic force microscopy analysis. The relaxation of residual strain causing morphological instability after 〜50 nm thickness represents the kinetic stabilization of LT growth. LT-AlN layers with thicknesses of 〜2O nm provide excellent surface smoothness of <0.9 nm and large relaxation, 〜94% of the lattice mismatch strain. AlN films thicker than 50 nm, for which the scaling exponents are greater than 1, revealed stress-driven surface roughening with coherent islands. The implementation of thick LT-AlN buffer layers is limited by the stress-driven surface roughening above 〜50 nm thickness.
社団法人応用物理学会の論文
1998-03-15