InGaAsP/InP Lasers with Two Reactive-Ion-Etched Mirror Facets

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概要

• 論文の詳細を見る

• Reactive ion etching in chlorine, methane, argon and hydrogen was used to etch smooth vertical mirror facets on both sides of InGaAsP/InP lasers. Optical measurements and lifetests show these lasers to have the same characteristics as lasers with cleaved facets.

• 社団法人応用物理学会の論文
• 1989-07-20

著者

• BINSMA J.

  Philips Research Labs

• Binsma J

  Philips Research Laboratories

• Tiemeijer L.

  Philips Research Laboratories

• GURP G.

  Philips Research Laboratories

• JACOBS J.

  Philips Research Laboratories

• BINSMA J.

  Philips Research Laboratories

関連論文

• Ridge Waveguide DFB Laser Operating at λ=1.5μm, Fabricated in a Single Step Epitaxial Growth : Waves, Optics and Quantum Electronics
• InGaAsP/InP Lasers with Two Reactive-Ion-Etched Mirror Facets
• High Performance Laser Amplifiers at 1.5 μm using E-Gum Evaporated Hafnium Di-Oxide Coatings

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