Buried Heterostructure GaAs/GaAlAs Distributed Bragg Reflector Surface Emitting Laser with Very Low Threshold (5.2 mA) under Room Temperature CW Conditions

概要

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We would like to report on the performance of buried heterostructure (BH) GaAs/Ga_<0.65>Al_<0.35>As surface emitting (SE) lasers with p-type Ga_<0.9>Al_<0.1>As/Ga_<0.4>Al_<0.6>As and SiO_2/TiO_2 multilayer Bragg reflectors (MBR) under room temperature CW conditins. The buried heterostructure was formed by a selective LPE growth technique with a Ga_<0.55>Al_<0.45>As mask instead of the conventional SiO_2 mask. The GaAlAs mask was very useful for forming uniformly small active regions of about 5 μm in diameter. Under room temperature CW conditions, the threshold current was 5.2 mA. The external differential quantum efficiency was about 16% and more than 0.6 mW of output power was obtained. The Lasing wavelength was about 897 nm.
社団法人応用物理学会の論文
1989-04-20