Cation Self-Diffusion Mediated by Arsenic-Antisite Point Defect in GaAs and AlAs-GaAs Superlattices
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概要
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Cation self-diffusion in GaAs and AlAs-GaAs superlattices is discussed in terms of activation enthalpy through a review of experimental results. It is argued that cation diffusion should be mediated by As-antisite point defects with use of As-antisite-rich materials and/or As-rich diffusion sources. It is suggested that As-antisite-mediated cation diffusion should yield the characteristic value of the activation enthalpy of 〜2.5 eV under intrinsic conditions. Experiments of interdiffusion from the literature in superlattices show the Fermi-level dependence of activation enthalpy. These lead to the conclusion that the As-antisite defect is responsible for p-type impurity-enhanced cation self-diffusion.
- 社団法人応用物理学会の論文
- 1989-12-20