High-Power Operation of AlGaAs/GaAs Large-Optical-Cavity Laser Diode with ZnS_xSe_<1-x>(x=0.06) Layer Grown by Adduct-Source Metalorganic Chemical Vapor Deposition Method (SOLID STATE DEVICES AND MATERIALS 1)

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概要

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• High-power operation of a large-optical-cavity (LOC) A1GaAs laser diode with a ridge waveguide buried in a ZnS_xSe_<1-x>(x=0.06) layer has been achieved. In order to produce a reliable high-power laser, we have developed the growth of a lattice-matched ZnS_xSe_<1-x>(x=0.06) layer by adduct-source metalorganic chemical vapor deposition (MOCVD) and a self-aligned fabrication process by a reactive ion beam etching (RIBE) method for the etching of ZnS_xSe_<1-x>. An extremely stable transverse mode operation of up to 100 mW is obtained with a low threshold current of 30 mA at an oscillation wavelength of 780 nm.

• 社団法人応用物理学会の論文
• 1989-11-20

著者

• Seki Tetsuya

  Electronic Device Research Department Seiko Epson Corporation

• Asaka Tatsuya

  Electronic Device Research Department Seiko Epson Corporation

• Iwano Hideaki

  Electronic Device Research Department Seiko Epson Corporation

• Watanabe Kazuaki

  Electronic Device Research Department Seiko Epson Corporation

• Tsunekawa Yoshifumi

  Electronic Device Research Department Seiko Epson Corporation

• YAMASAKI Yasuji

  Electronic Device Research Department, SEIKO EPSON CORPORATION

• TAKAMURA Takashi

  Electronic Device Research Department, SEIKO EPSON CORPORATION

• Yamasaki Yasuji

  Electronic Device Research Department Seiko Epson Corporation

• Takamura T

  Electronic Device Research Department Seiko Epson Corporation

関連論文

• High-Power Operation of AlGaAs/GaAs Large-Optical-Cavity Laser Diode with ZnS_xSe_(x=0.06) Layer Grown by Adduct-Source Metalorganic Chemical Vapor Deposition Method (SOLID STATE DEVICES AND MATERIALS 1)

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