Arsenic-Induced Faceting of Vicinal Si(100) (SOLID STATE DEVICES AND MATERIALS 1)

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概要

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• Upon cooling vicinal Si(100) misoriented by 5^○ in an arsenic pressure a reversible transition occurs from a uniformly stepped surface to a faceted surface. This transition occurs at an As coverage of 0.38 ± 0.08 ML. The transition temperature varies with As pressure from 760℃ at 3.5 × 10^<-9> torr to 840℃ at 7 × 10^<-8> torr. A metastable structure with four-layer high steps can be formed by annealing the initially clean surface in an As pressure between 650℃ and 800℃.

• 社団法人応用物理学会の論文
• 1989-11-20

著者

• OHNO T.

  Department of Obstetrics and Gynecology, School of Medicine, Hokkaido University

• Williams Ellen

  Department Of Physics And Astronomy University Of Maryland

関連論文

• Cytogenetic and clinical studies on cystic hygroma : Abstracts of Papers Presented at the Thirty-Second Annual Meeting of the Japanese Teratology Society Tokyo, Japan, July 8-10, 1992
• Arsenic-Induced Faceting of Vicinal Si(100) (SOLID STATE DEVICES AND MATERIALS 1)
• Kinetic Parameters of Pb Obtained from Crystallite Evolutions

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