New Deep-Level Photoluminescence Bands of Homoepitaxial CdTe Films Grown by Metalorganic Chemical Vapor Deposition

概要

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Photoluminescence spectra of CdTe homoepitaxial layers on (100)- and (111)-oriented substrates grown by metalorganic chemical vapor deposition were measured at 4.2 K. Sharp and intense emission peaks at 1.47 and 1.36 eV have been observed in the films grown on (111) substrates. These sharp peaks seem to be structural defect-related emissions and are similar to the Y and Z bands observed in ZnSe.
社団法人応用物理学会の論文
1989-10-20