Epitaxially Induced Stress in GaAs Layer on V-Grooved Si and GaAs Substrates
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1987-07-20
著者
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Kamijoh Takeshi
Device Research Department Optoelectronics Technology Research Cooporation
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Hashimoto Akihiro
Device Research Department Optoelectronics Technology Research Cooporation
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WATANABE Nozomu
Device Research Department, Optoelectronics Technology Research Cooporation
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Watanabe Nozomu
Device Research Department Optoelectronics Technology Research Cooporation