Low-Temperature Growth of AlAs/GaAs Heterostructures by Modulated Molecular Beam Epitaxy

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概要

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• Modulated molecular beams phase-locked to reflection high-energy electron diffraction (RHEED) oscillations have been used to grow low-temperature GaAs quantum wells (QW) confined by AlAs/GaAs short-period superlattices (SL). Two different phase-locked modulation growth modes were attempted and compared. In the first mode, only the As_4 beam was interrupted periodically in-phase with the monolayer growth cycle. In the second one, both Ga (or Al) and As_4 incident beams were modulated synchronously with the monolayer period. Both growth methods were seen to produce high-optical-quality QW and SL's layers at low-growth temperatures (T_s≃400℃).

• 社団法人応用物理学会の論文
• 1987-07-20

著者

• Briones F.

  Cnm-csic

• RECIO M.

  CNM-CSIC Serrano

• GONZALEZ L.

  CNM-CSIC

• VAZQUEZ M.

  CNM-CSIC

• Recio M.

  Cnm-csic

関連論文

• Optical Properties of GaAs/ AlAs Short Period Superlattices : Surfaces, Interfaces and Films
• Low-Temperature Growth of AlAs/GaAs Heterostructures by Modulated Molecular Beam Epitaxy

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