Epitaxial Growth of High Quality ZnSe on GaAs Substrate by Atmospheric Pressure MOVPE Using Dimethylzinc and Hydrogen Selenide
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概要
- 論文の詳細を見る
Single crystalline layers of undoped ZnSe have been grown on GaAs substrates by atmospheric pressure MOVPE using dimethylzinc (DMZ) and hydrogen selenide (H_2Se). Premature reactions typically encountered with this source combination can be eliminated completely, even at atmospheric pressure, by controlling the flow velocity of each source gas and the source gas mole ratio. For the first time, an excellent mirror surface morphology, as revealed by Nomarski interference microscopy, was obtained even for 8.2 μm thick epilayers grown at 300℃.
- 社団法人応用物理学会の論文
- 1987-05-20
著者
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Koyama Tadashi
Tsukuba Research Laboratory Nippon Sheet Glass Co. Ltd.
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Yodo Tokuo
Tsukuba Research Laboratory Nippon Sheet Glass Co. Ltd.
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Yamashita Ken
Tsukuba Research Laboratory Nippon Sheet Glass Co. Ltd.
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OKA Hidetoshi
Tsukuba Research Laboratory, Nippon Sheet Glass Co., Ltd.
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Oka Hidetoshi
Tsukuba Research Laboratory Nippon Sheet Glass Co. Ltd.
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- Epitaxial Growth of High Quality ZnSe on GaAs Substrate by Atmospheric Pressure MOVPE Using Dimethylzinc and Hydrogen Selenide