Photoluminescence Study of Undoped, Sn-Doped and S-Doped InP Single Crystals

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概要

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• Photoluminescence (PL) intensity distribution was measured at 4.2 K along the 011 direction across the wafer, to compare the etch-pit density (EPD) distribution for undoped, Sn-doped and S-doped Ink. Exiciton, donor-acceptor and 1.06 eV peaks of the undoped InP have W-shapes corresponding to the EPD distribution. The 1.06 eV band seems to be related to In vacancies. The Sn-doped and the S-doped InP show broadened and shifted peaks to a higher energy side for near band-edge emissions. The PL intensity distributions and the EPD distributions are W-shaped for the Sn-doped and U-shaped for the S-doped Ink, respectively.

• 社団法人応用物理学会の論文
• 1987-04-20

著者

• Takahashi Junzo

  Electronic Materials And Components Research Laboratories Nippon Mining Co. Ltd.

• INOUE Takayuki

  Electronic Materials and Components Research Laboratories, Nippon Mining Co., Ltd.

• Inoue Takayuki

  Electronic Materials And Components Research Laboratories Nippon Mining Co. Ltd.

関連論文

• Photoluminescence Study of Undoped, Sn-Doped and S-Doped InP Single Crystals

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