Metal Schottky Barriers on Hydrogenated Amorphous Ge/Si Superlattices

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概要

• 論文の詳細を見る

• The barrier heights and junction properties of Pt Schottky barriers on hydrogenated amorphous Ge/Si superlattices have been characterized for films with individual layer thickness from 〜5 to 30 Å. The electronic properties of these junctions, which allow efficient extraction of photogenerated carriers, are explained in terms of the quantum shifts in the conduction band and the densities of gap states in the Ge layers.

• 社団法人応用物理学会の論文
• 1987-02-20

著者

• Wronski C.r.

  Center For Electronic Materials And Devices The Pennsylvania State University

• HICKS M.

  Center for Electronic Materials and Devices, The pennsylvania State University

• Hicks M.

  Center For Electronic Materials And Devices The Pennsylvania State University

関連論文

• Metal Schottky Barriers on Hydrogenated Amorphous Ge/Si Superlattices

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