Study of the Initial Growth Process of ZnSe on Si(111) by Molecular Beam Epitaxy

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概要

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• Reflection high-energy electron diffraction, atomic force microscopy, and Auger spectroscopy were used to study the initial stages of growth of ZnSe on Si(111) substrates by molecular beam epitaxy. Initially, ZnSe grows in a three dimensional mode: after 7 monolayers (ML) of depositon the islands height is 〜20 Å, with a diameter of 〜650 Å, and a density of 〜20 islands per μm^2. Around 〜10 ML of deposition the growth changes to a two dimensional mode, and finally, a flat ZnSe surface is obtained for 〜30 ML. The island formation at the initial stage of growth could be used to synthesize self assembling ZnSe-quantum dots. On the other hand, the fast change to a two dimensional growth mode is very useful for structures requiring a flat surface.

• 社団法人応用物理学会の論文
• 1997-09-15

著者

• Lopez-lopez Maximo

  Departamento De Fisica Centro De Investigacion Y De Estudios

• HERNANDEZ-CALDERON Isaac

  Departamento de Fisica Centro de Investigacion y de Estudios Avanzados del IPN

• MENDEZ-GARCIA Victor

  Departamento de Fisica Centro de Investigacion y de Estudios,

• Hernandez-calderon Isaac

  Departamento De Fisica Centro De Investigacion Y De Estudios

• Mendez-garcia Victor

  Departamento De Fisica Centro De Investigacion Y De Estudios

関連論文

• Photoreflectance and Photoluminescence Characterization of GaAs Quantum Wells Grown by Molecular Beam Epitaxy on Flat and Misoriented Substrates
• Study of the Initial Growth Process of ZnSe on Si(111) by Molecular Beam Epitaxy

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