Visible Luminescence Induced by Si-Ion Implantation into Si Single Crystals Covered with a Thin SiO_2 Layer

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概要

• 論文の詳細を見る

• An investigation of Si ion implantation into Si single crystals covered with a SiO_2 layer various thicknesses (1000-3000Å) was conducted and new characteristic luminescence bands were observed. A visible band that peaked around 1.89 or 2.0 eV was observed from the as-omplanted samples. After high temperature post annealing, a visible band located in the range of 1.7 eV was detected. Interestingly, a new luminescence band around 1.5 eV was observed, for first time, in a sample covered with a 3000Å SiO_2 layer, after high dose implantation and annealing. We report, in this letter, the experimental results and a brief discussion concerning the various possible mechanisms responsible for the observed luminescence bands.

• 社団法人応用物理学会の論文
• 1997-08-01

著者

• Liu Baixin

  Department Of Materials Science And Engineering Tsinghua University

• LAN Aidong

  Department of Materials Science and Engineering,Tsinghua University

• BAI Xinde

  Department of Materials Science and Engineering,Tsinghua University

• Bai Xinde

  Department Of Materials Science And Engineering Tsinghua University

• Lan Aidong

  Department Of Materials Science And Engineering Tsinghua University

関連論文

• Thermodynamic Interpretation of the Martensitic Transformation in Ultrafine γ-Fe(N) Particles
• Visible Luminescence Induced by Si-Ion Implantation into Si Single Crystals Covered with a Thin SiO_2 Layer

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