Room-Temperature Epitaxial Growth of Ni-Zn Ferrite Thin Films by Pulsed Laser Deposition in High Vacuum
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概要
- 論文の詳細を見る
Thin films of Ni-Zn ferrite have been epitaxially grown in situ on basal plane sapphires at room temperature by pulsed laser deposition in high vacuum. The films deposited at oxygen pressures of 1×10^<-5> to 1×10^<-6> Torr grew with spinel-type crystal structure and (111) planar orientation. X-ray phi scan analysis showed that the [11^^-0] direction in the (Ni, Zn) Fe_2O_4 (111) plane is parallel to the [11^^-00] direction in the sapphire (0001) plane. The films exhibited streaky reflection high-energy electron diffraction patterns, indicating excellent surface smoothness.
- 社団法人応用物理学会の論文
- 1997-08-01
著者
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Gomi Manabu
Department Of Physical Electronics Tokyo Institute Of Technology
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Gomi Manabu
Department Of Material Science Japan Advanced Instutiute Of Science And Technology
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KIYOMURA Takakazu
Department of Materials Science, Japan Advanced Institute of Science and Technology
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Kiyomura Takakazu
Department Of Materials Science Japan Advanced Institute Of Science And Technology
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