High Efficiency Electron-Ermissiom in Pt/SiO_x/Si/Al Structure

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概要

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• A high efficiency electro-emission device (HEED) has been developed with a structure of Pt/SiO_x/Si/Al on a thermally-oxidized Si substrate. The thicknesses of the SiO_x and Si films were 400 um and 5 μm, respectively. Electron emission characteristics of the HEED are reported. It was found that the HEED has an electron-emission efficiency as high as 28% and a high brightness of 8Okcd/m^2 using phosphor ZnS:Cu,Al. This high electron-emission efficiency was obtained in a range of applied voltage in which negative resistance occurred.

• 社団法人応用物理学会の論文
• 1997-07-15

著者

• Iwasaki Shingo

  Corporate R&d Laboratory Pioneer Electronic Corporation

• NEGISHI Nobuyasu

  Corporate R&D Laboratory, Pioneer Electronic Corporation

• CHUMAN Takashi

  Corporate R&D Laboratory, Pioneer Electronic Corporation

• YOSHIKAWA Takamasa

  Corporate R&D Laboratory, Pioneer Electronic Corporation

• ITO Hiroshi

  Corporate R&D Laboratory, Pioneer Electronic Corporation

• OGASAWARA Kiyohide

  Corporate R&D Laboratory, Pioneer Electronic Corporation

• Chuman Takashi

  Corporate R&d Laboratory Pioneer Electronic Corporation

• Yoshikawa Takamasa

  Corporate R&d Laboratory Pioneer Electronic Corporation

• Ogasawara Kiyohide

  Corporate R&d Laboratory Pioneer Electronic Corporation

• Negishi Nobuyasu

  Corporate R&d Laboratory Pioneer Electronic Corporation

関連論文

• High Efficiency Electron-Ermissiom in Pt/SiO_x/Si/Al Structure

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