Determination of Surface Impturities on a Gallium Arsenide Wafer by Inductively Coupled Plasma Mass Spectrometry

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概要

• 論文の詳細を見る

• The surface impurities on a GaAs wafer were determined by inductively coupled plasma mass spectrometry to clarify the diffusion behavior which affected the layer construction, The sample was etched by hydrofluoric acid in a PTFE vessel at room temperature. Depth analysis of the wafer xvas performed by repeated etching as impurities were thought to exist near the wafer surface. Copper was difficult to dissolve by hydrofluoric acid due to an ionization tendency compared to the hydrogen ion. The method used in this study was demonstrated to be effective for determining surface impurities on a GaAs wafer for an impurity level of 10^11 atoms/cm^2 and for analyzing depth profiles from the surface.

• 社団法人応用物理学会の論文
• 1997-07-01

著者

• Hayashi Masaru

  Environmental Engineering Laboratory Research And Development Center Toshiba Corporation

• KOZUKA Shoji

  Environmental Engineering Laboratory, Research and Development Center, Toshiba Corporation

• SUGAMOTO Junji

  Semiconductor Materials Engineering Department, Toshiba Corporation

• FURUKAWA Kazuyoshi

  Semiconductor Materials Engineering Department, Toshiba Corporation

• Kozuka Shoji

  Environmental Engineering Laboratory Research And Development Center Toshiba Corporation

• Sugamoto Junji

  Semiconductor Materials Engineering Department Toshiba Corporation

• Furukawa Kazuyoshi

  Semiconductor Materials Engineering Department Toshiba Corporation

関連論文

• Determination of Surface Impturities on a Gallium Arsenide Wafer by Inductively Coupled Plasma Mass Spectrometry
• Determination of Uranium and Thorium in Aluminum by Inductively Coupled Plasma Mass Spectrometry

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