Atomic Force Microscopy Study of the Initial Growth of Copper Films by Chemical Vapor Deposition from Hexafluoroacetylacetonate-copper(I)-trimethylvinylsilane:An Indication of a Surface Electron Transfer Reaction

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概要

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• Atomic force microscopy was employed to study the initial growth of copper films on various substrates in a metal-organic chemical vapor deposition (MOCVD) system using copper (I)-hexafluoroacetylacetonate trimethlyvinylsilane as the precursor. Three-dimensional nuclei growth was observed. The nunclei-number density differs on various substrate surfaces, from 2 × 10^8 cm^-2 on SiO_2 surface to 2 × 10^10 cm^-2 on Pt strrface at a substrate temperature of 498 K. Kinetic analysis about the nuclei number density on various substrate surfaces shows that the activation energy of tlae surface nucleation of the prectursor is reversely proportional to the electric conductivity of the surface. The results indicate an electron trauasfer reaction between Cu^+1(hfac), an intermediate product of the surface decomposition of tlae precursor, and stubstrate sturface plays a key role in flue formation of initial Cu nucleus.

• 社団法人応用物理学会の論文
• 1997-06-01

著者

• Hong Lu-sheng

  Department Of Chennical Engineering National Taiwan Institute Of Technology

• Lin Mei-zu

  Department Of Chennical Engineering National Taiwan Institute Of Technology

関連論文

• Atomic Force Microscopy Study of the Initial Growth of Copper Films by Chemical Vapor Deposition from Hexafluoroacetylacetonate-copper(I)-trimethylvinylsilane:An Indication of a Surface Electron Transfer Reaction

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