Effect of Al-doping on the Grain Growth of Zn0

概要

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Grain growth of ZnO in liquid phase sintering of ZnO -0.5 mol%Bi_2O_3 ceramics has been studied by increasing the doping amount of A1_20_3 from 25ppm to 2O0ppm. A1_20_3 was doped using an aluminum nitrate aqueous solution. When 50 ppm of A1_20_3 was doped to Zn0 ceramics, abnormal grain growtln was observed, while 75ppmA1_20_3 retarded grain growth. Doping of A1_20_3 to pure Zn0 ceramics did not cause abnormal grain growth, but simply retarded grain growth . The ratio of diameters of these grain sizes sintered at 900℃: d (abnormal grain growth) /d(retarded grain growth) is 20 -100. Mechanisms of abnormal grain growth and retardation are proposed as follows. When the doped amount of A1_20_3 was 50 ppm, aluminium compound thin films which were formed around ZnO grains at a low temperature arud retarcled grain growth disappeared suddenly by diffusion into the ZnO grain and ZnO grains grew suddenly, When the doped amount of A1_20_3 was 75ppm and the alumintum compound film was thick enough, part of the film remained unclhanged even when a considerable proportion of the alumminum diffused mainly into the Zn0 to reach solubility, retarding grain growth.
社団法人応用物理学会の論文
1997-05-01