Low Temperature Direct Silicon Wafer Bonding Using Argon Activation

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概要

• 論文の詳細を見る

• We lnave observed that silicon sturfaces activated in an Ar plasma form very strong bonds after a low temperature anneal. However, voids formed by Ar gas bubbles develop dturing the annealing process. Tluis work provides insight into generalized plasma assisted bonding of material surfaces used in micro- (electronic / optical / mechanical)devices.

• 社団法人応用物理学会の論文
• 1997-05-01

著者

• BOWER Robert

  Electrical and Computer Engineering Department, University of California

• CHlN Frank

  Electrical and Computer Engineering Department, University of California

関連論文

• Low Temperature Direct Silicon Wafer Bonding Using Argon Activation

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