Irrnproverment of a-Si:H Solar Cell Characteristics by means of a Boron-Carbon Window Layer
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-04-15
著者
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Cota-araiza Leonel
Ifunam Apdo
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Asomoza Rene
Solid State Electronics Section Electrical Engineering Departmnent Cinvestav-ipn
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MATSUMOTO Yasuhiro
Solid State Electronics Section, Electrical Engineering Departmnent, CINVESTAV-IPN
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MERKULOV Alexander
Solid State Electronics Section, Electrical Engineering Departmnent, CINVESTAV-IPN
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HIRATA Gustavo
IFUNAM, Apdo
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Hirata Gustavo
Ifunam Apdo
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Merkulov Alexander
Solid State Electronics Section Electrical Engineering Departmnent Cinvestav-ipn
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Matsumoto Yasuhiro
Solid State Electronics Section Electrical Engineering Departmnent Cinvestav-ipn
関連論文
- Irrnproverment of a-Si:H Solar Cell Characteristics by means of a Boron-Carbon Window Layer
- P-type Polycrystalline Si Films Prepared by Aluminum-Induced Crystallization and Doping Method