Thermal Environment Prediction for Silicon Crystal Growth of up to 16-inch Diameters in Czochralski Furnaces
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-12-01
著者
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Matsubara Junichi
Crystal Growth Department Super Silicon Crystal Research Institute Corp.
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TAKANO Kiyotaka
Crystal Growth Department, Super Silicon Crystal Research Institute Corp.
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IIDA Tetsuhiro
Crystal Growth Department, Super Silicon Crystal Research Institute Corp.
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KURAMOTO Makoto
Crystal Growth Department, Super Silicon Crystal Research Institute Corp.
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MACHIDA Norihisa
Crystal Growth Department, Super Silicon Crystal Research Institute Corp.
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SHIRAISHI Yutaka
Crystal Growth Department, Super Silicon Crystal Research Institute Corp.
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TAKASE Nobumitsu
Crystal Growth Department, Super Silicon Crystal Research Institute Corp.
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YAMAGISHI Hirotoshi
Crystal Growth Department, Super Silicon Crystal Research Institute Corp.
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Yamagishi H
Crystal Growth Department Super Silicon Crystal Research Institute Corp.
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MATSUBARA Junichi
Crystal Growth Department, Super Silicon Crystal Research Institute Corp.
関連論文
- Thermal Environment Prediction for Silicon Crystal Growth of up to 16-inch Diameters in Czochralski Furnaces
- Si-SiO_2 Interface Structures : Chemical Shifts in Si 2p Photoelectron Spectra : Surfaces, Interfaces and Films