High Peak-to-Valley Current Ratio GaAs/InGaAs/InAs Double Stepped Quantum Well Resonant Interband Tunneling Diodes at Room Temperature

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概要

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• A high ratio of the peak current density to the valley current density of current-voltage characteristic is accomplished for the double stepped quantum well resonant interband tunneling diode (DSQW RITD). Results for good quantum confinement effect and long drift layer with deep quantum well GaAs/In_<0.59>Ga_<0.41>)As/InAs DSQW RITD that has a lower valley current density of about 0.98A/cm^2 and a higher peak-to-valley current ratio (PVCR) reached 622 at room temperature than conventionally designed double quantum well resonant interband tunneling diodes (DQW RITDs) are presented. This PVCR value is also the highest value than those of the other resonant tunneling diodes.

• 社団法人応用物理学会の論文
• 1996-05-01

著者

• Huang Kuang-chih

  Department Of Electrical Engineering National Sun Yat-sen University:department Of Electrical Engine

• YANG Chih-Chin

  Department of Electrical Engineering, National Sun Yat-sen University

• SU Yan-Ruin

  Department of Electrical Engineering, National Cheng Kung University

• Su Yan-ruin

  Department Of Electrical Engineering National Cheng Kung University

• Yang Chih-chin

  Department Of Electrical Engineering National Sun Yat-sen University

関連論文

• High Peak-to-Valley Current Ratio GaAs/InGaAs/InAs Double Stepped Quantum Well Resonant Interband Tunneling Diodes at Room Temperature

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