Antimony Co-Implantation to Suppress Boron-Penetration in P^+-Poly Gate Metal-Oxide-Semiconductor Transistors
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概要
- 論文の詳細を見る
A novel method for suppressing boron-penetration is reported. Antimony co-implantation with BF_2 in p-poly gate of metal-oxide-semiconductor (MOS) device is found to effectively alleviate the boron-penetration enhanced by the existence of fluorine. The boron-penetration in BF_2 implanted poly-gate is observed to be significantly reduced as the dose of co-implanted antimony increases. From Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS) analysis, the suppression of boron-penetration is shown to be possibly due to the formation of Sb-F compound, which reduces the fluorine enhanced boron diffusion.
- 社団法人応用物理学会の論文
- 1996-03-15
著者
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Hsu Charles
Semiconductor Technology And Application Research (star) Group Department Of Electrical Engineering
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Liaw Ming-chi
National Nano Device Laboratory
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SUN Wein-Town
Semiconductor Technology and Application Research (STAR) Group, Department of Electrical Engineering
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YANG Ching-Song
Semiconductor Technology and Application Research (STAR) Group, Department of Electrical Engineering
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Sun Wein-town
Semiconductor Technology And Application Research (star) Group Department Of Electrical Engineering
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Yang Ching-song
Semiconductor Technology And Application Research (star) Group Department Of Electrical Engineering
関連論文
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- Improving Gate Oxide Integrity of Cobalt Silicided P-Type Polysilicon Gate Using Arsenic Implantation
- Antimony Co-Implantation to Suppress Boron-Penetration in P^+-Poly Gate Metal-Oxide-Semiconductor Transistors