Highly Conductive P-Type ZnTe:As Grown by Atmospheric Metalorganic Chemical Vapor Deposition Using Trimethylarsine

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概要

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• Highly conductive p-type ZnTe was grown by atmospheric metalorganic chemical vapor deposition (MOCVD). The source materials were dimethylzinc and diisopropyltelluride. Arsenic was doped into ZnTe with trimethylarsine. The carrier concentration depended on both the growth temperature and VI/II ratio. The highest carrier concentration measured in Hall measurements was 1.3×10^<19> cm^<-3>, which is the highest ever reported for MOCVD-grown ZnTe. Low-temperature photoluminescence spectra showed strong As-related bound exciton lines and donor-to-acceptor recombination lines.

• 社団法人応用物理学会の論文
• 1996-01-15

著者

• Kamata Atsushi

  Materials And Devices Research Laboratories Toshiba Corporation

• Yoshida Hiroaki

  Materials And Devices Research Laboratories Toshiba Corporation

関連論文

• Highly Conductive P-Type ZnTe:As Grown by Atmospheric Metalorganic Chemical Vapor Deposition Using Trimethylarsine

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