Appearance of Single-Crystalline Properties in Fine-Patterned Si Thin Film Transistors (TFTs) by Solid Phase Crystallization (SPC)

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概要

• 論文の詳細を見る

• Uniformity of thin film transistor (TFT) characteristics was evaluated by varying the channel size. As channel length decreased and width fell below 1 μm, uniformity was degraded drastically. A few samples showed high-performance characteristics such as sharp gate voltage swing below 100 mV/dec and high mobility as high as 100 cm^2/V・s near room temperature. Upon evaluation of their temperature dependence, the conduction mechanism showed not polycrystalline but single-crystal-like properties in the lattice scattering. The improved TFTs are thought to have been formed in grain boundary-free crystal grains.

• 社団法人応用物理学会の論文
• 1993-11-01

著者

• Noguchi Takashi

  Ulsi R & D Laboratories Sony Corporation

関連論文

• Selective Annealing Utilizing Single Pulse Excimer Laser Irradiation for Short Channel Metal-Oxide-Semiconductor Field-Effect Transistors
• Ultrashallow Junctions Formed by Excimer Laser Annealing
• Appearance of Single-Crystalline Properties in Fine-Patterned Si Thin Film Transistors (TFTs) by Solid Phase Crystallization (SPC)

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