Preparation of MgIn_2O_<4-X> Thin Films on Glass Substrate by RF Sputtering
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概要
- 論文の詳細を見る
MgIn_2O_<4-X> thin films were deposited onto a silica glass plate by the RF sputtering method. The highest conductivity observed for the film post-annealed under H_2 flow was 2.3×10^2 S/cm, with a carrier concentration of 6.3×10^<20> cm^<-3> and a mobility of 2.2 cm^2・V^<-1>・s^<-1>. No distinct optical absorption band was observed in the visible region.
- 社団法人応用物理学会の論文
- 1993-09-01
著者
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UEDA Naoyuki
Institute for Molecular Science
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KAWAZOE Hiroshi
Institute for Molecular Science
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Unno Hiroshi
Research Laboratory Of Engineering Materials Tokyo Institute Of Technology
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Omata Takahisa
Research Laboratory Of Engineering Materials Tokyo Institute Of Technology
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Kawazoe H
Tokyo Inst. Technol. Kanagawa Jpn
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HIKUMA Naoko
Research Laboratory of Engineering Materials, Tokyo Institute of Technology
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UEDA Naoyuki
Research Laboratory of Engineering Materials, Tokyo Institute of Technology
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HASHIMOTO Takuya
Institute for Molecular Science
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Hikuma Naoko
Research Laboratory Of Engineering Materials Tokyo Institute Of Technology
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