Extrinsic Base Surface Recombination Current in GaInP/GaAs Heterojunction Bipolar Transistors with Near-Unity Ideality Factor

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概要

• 論文の詳細を見る

• Devices demonstrating near-ideal I-V characteristics are fabricated to examine the ideality factor for extrinsic base surface recombination in GaInP/GaAs HBTs. These HBTs with various emitter areas have either passivated or exposed extrinsic base surfaces. Comparison of the passivated and unpassivated devices' characteristics indicate that the ideality factor value of the surface recombination is as close to unity as 1.05. The ideality factor value is bias dependent, decreasing to values of 1.6 at lower base-emitter biases.

• 社団法人応用物理学会の論文
• 1993-05-15

著者

• Liu William

  Central Research Laboratories Texas Instruments

関連論文

• Transient Response of Junction Temperature in Power Heterojunction Bipolar Transistors
• Extrinsic Base Surface Recombination Current in GaInP/GaAs Heterojunction Bipolar Transistors with Near-Unity Ideality Factor

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