Optical Investigations of the Sidewall Recombination in Wet Etched InGaAs/InP-Wires

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We have investigated the optical properties of wet chemically etched InP/InGaAs-wires with widths between 100 nm and 10 μm for a wide range of excitation densities and energies. We observe that the non radiative recombination centers at the etched sidewalls can be saturated already at moderate excitation densities of 100 W/cm^2. Avoiding saturation effects we obtain a surprisingly large sidewall recombination velocity of 10^7 cm/s at 77 K. The comparison of luminescence measurements at excitation energies above and below the InP band gap energy shows that the non radiative recombination centers are located in the InGaAs quantum well.
社団法人応用物理学会の論文
1993-02-01