Scanning Electron Microscope Observations of As^+-Ion-Implanted Region

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概要

• 論文の詳細を見る

• Lateral and depth profiles of the ion-implanted region were first observed using cleaved cross-sectional scanning electron microscope. The amorphous region induced by ion bombardment appears dark relative to the crystalline region. It is found that the secondary electrons, as well as the backscattered ones, are influenced by the so-called channeling effect.

• 社団法人応用物理学会の論文
• 1993-10-01

著者

• Yabuuchi Y

  Matsushita Technores. Inc. Osaka Jpn

• Takahashi Yasuhito

  Opto-electronic Research Laboratory Semiconductor Research Center Matsushita Electric Industrial Co.

• YABUUCHI Yasufumi

  Materials Characterization Department, Matsushita Technoreserch Inc.

• INAZATO Sachiko

  Materials Characterization Department, Matsushita Technoresearch Inc.

• OGURA Kazumichi

  Applied Microscopy Group, Application & Research Center, Electron Optics Division, JEOI, Ltd.

• ONO Akishige

  EO Operation, JEOL DATUM Ltd.

• Ono Akishige

  Eo Operation Jeol Datum Ltd.

• Inazato S

  Characterization Technol. Group Osaka Jpn

• Ogura K

  Applied Microscopy Group Application & Research Center Electron Optics Division Jeoi Ltd.

• Ogura Kazumichi

  Application & Research Center Electron Optics Division Jeol Ltd.

関連論文

• Scanning Electron Microscope Observations of As^+-Ion-Implanted Region
• Observation of an Emulsion Microstructure with Cryo-FESEM
• Scanning Electron Microscope

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