Relationship between Thermally Grown SiO_2 and the As-Dried Physical Surface Characteristic

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概要

• 論文の詳細を見る

• Two conditions are used to dry Si wafers: (A) for 5 minutes at 800 r.p.m. and (B) for 3 minutes at 800 r.p.m. This drying with a centrifugal effect in a clean air environment was done after immersion into diluted HF (1:200) at R.T. and sufficient rinsing with DIW at R.T. We observed the physical surface characteristics (or adsorbent state) for each wafer by the cold chuck method at 5℃. The breakdown voltage characteristic, V_<bd>, was measured for each sample. It is found that there is a relationship between the physical surface characteristic seen in the cold chuck image and the V_<bd>.

• 社団法人応用物理学会の論文
• 1991-12-15

著者

• MURAKAMI Yukihiro

  Process Engineering Center, Nippon Motorola, Co., Ltd.

関連論文

• Relationship between Thermally Grown SiO_2 and the As-Dried Physical Surface Characteristic

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