Effect of Metal-Organic Composition Fluctuation on the Atmospheric-Pressure Metal-Organic Vapor Phase Epitaxy Growth of GaAlAs/GaAs and GaInAs/InP Structures

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概要

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• We report, for the first time, a direct relationship between the composition fltuctuation on the ternary layer grown by atmospheric pressure metalorganic vapor-phase epitaxy (AP-MOVPE) and the pulsed character of high-vapor-pressure metalorganic (MO) flows. We show that the grwoth rates of GaAlAs and GaInAS layers, grown with trimethylgallium (TMG) and triethylgallium (TEG) sources, are of tens of Å per bubble for the methyl case and a few Å for the ethyl one.

• 社団法人応用物理学会の論文
• 1991-05-01

著者

• Decobert Jean

  Cpqd-telebras

• Cardoso Lisandro

  Insituto De Fisica Unicamp

• Ossart Pierre

  CNET

• Brasil Maria

  Insituto de Fisica UNICAMP

• Ganiere Jean

  Ecole Polytechnique Federale, Dep. Physique

• Horiuchi Luchiano

  CpqD-Telebras

• Sachilotti Marco

  CpqD-Telebras

• Ganiere Jean

  Ecole Polytechnique Federale Dep. Physique

関連論文

• Effect of Metal-Organic Composition Fluctuation on the Atmospheric-Pressure Metal-Organic Vapor Phase Epitaxy Growth of GaAlAs/GaAs and GaInAs/InP Structures

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