Planarized Be δ-Doped Heterostructure Bipolar Transistor Fabricated Using Doping Selective Contact and Selective Hole Epitaxy

スポンサーリンク

概要

• 論文の詳細を見る

• We report a heterostructure bipolar transistor (HBT) in which the base is δ-doped with Be to a concentration of 1×10^<14>cm^<-2> and the Be is spatially confined ot within 15 Å. To fabricate the HBT without inducing Be redistribution and avoid critical emitter mesa etching, we have developed a new low-temperature base-contacting procedure (T_<max>=420℃) which requires no base-emitter etching. A 50μm diameter δ-HBT shows a current gain of 20. Upon reducing the size of the emitter to 3×8 μm, the current gain of the δ-HBT increases to 30. This, we believe, is due to our new processing technique which eliminates the critical base-emitter etch and hence reduces surface recombination. In addition, we grew and fabricated HBT's in holes that have been pre-etched into the substrates. High quality material has been achieved in the holes.

• 社団法人応用物理学会の論文
• 1991-02-15

著者

• Cunningham J.e.

  At&t Bell Laboratories

• Kuo T.Y.

  Massachusetts Institute of Technology

• Cunningham J.E.

  AT&T Bell Laboratories

• Goossen K.W.

  AT&T Bell Laboratories

• Ourmazad A.

  Massachusetts Institute of Technology

• Jan W.

  AT&T Bell Laboratories

• Fonstad C.G.

  Massachusetts Institute of Technology

• Ren F.

  Massachusetts Institute of Technology

• Goossen K.w.

  At&t Bell Laboratories

関連論文

• Planarized Be δ-Doped Heterostructure Bipolar Transistor Fabricated Using Doping Selective Contact and Selective Hole Epitaxy

スポンサーリンク