A Unified Circuit Model for the Polysilicon Thin Film Transistor

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概要

• 論文の詳細を見る

• This paper describes a unified approach to modelling the polysilicon thin film transistor (TFT) for the purposes of circuit design. The approach uses accurate methods of predicting the channel conductance and then fitting the resulting data with a polynomial. Two methods are proposed to find the channel conductance: a device model and measurement. The approach is suitable because the TFT does not have a well defined threshold voltage. The polynomial conductance is then integrated generally to find the drain current and channel charge, necessary for a complete circuit model.

• 社団法人応用物理学会の論文
• 1991-02-01

著者

• Milne W

  Univ. Cambridge Cambridge Gbr

• Izzard M.J.

  Cambridge University Engineering Department

• Migliorato P.

  Cambridge University Engineering Department

• Milne W.I.

  Cambridge University Engineering Department

関連論文

• A Unified Circuit Model for the Polysilicon Thin Film Transistor

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