High Conducting Large Area Indium Tin Oxide Electrodes for Displays Prepared by DC Magnetron Sputtering

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概要

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• High conducting ITO films were deposited by DC magnetron sputtering using ITO targets. At substrate temperatures of 200℃ and 300℃ ITO films were reproducibly prepared with resistivities of 1.9×10^<-4>Ω・cm respectively 1,4×10^<-4>Ω・cm at a deposition rate of 20Å/s. ITO films prepared at room temperature show after annealing at 200℃ in air, nitrogen or vacuum the same low resistivity of 1.9×10^<-4>Ω・cm when using optimum sputtering conditions. The influence of the deposition temperature on the electrical, optical and etchintg properties was studied and related to the structure of the ITO films. Details on an optimized in line sputtering system for the economic large scale production of ITO films are presented.

• 社団法人応用物理学会の論文
• 1991-02-01

著者

• Latz R.

  Leybold Ag

• Michael K.

  Leybold AG

• Scherer M.

  Leybold AG

関連論文

• High Conducting Large Area Indium Tin Oxide Electrodes for Displays Prepared by DC Magnetron Sputtering

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