Crystallization of Amorphous In_2O_3 Films during Film Growth

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概要

• 論文の詳細を見る

• The effect of the film thickness on crystallization of amorphous indium oxide films was investigated using transmission electron microscopy and electron diffraction. Films of different thicknesses, 10-60 Å, were reactively evaporated on SiO substrates at 200℃. The results showed that the amorphous films crystallized markedly with increasing film thickness above 40 Å, while below the thickness of 40 Å, the films partially crystallized front pre-existing crystallites. Concurrently, the microstructure of the films became almost continuous above the thickness of 40 Å.

• 社団法人応用物理学会の論文
• 1991-12-01

著者

• Muranaka Shigetoshi

  Department Of Chemistry College Of Liberal Arts And Sciences Kyoto University

関連論文

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• Transformation of Amorphous SnO_x Films Studied by Electrical Resistivity and Optical Transmission
• Crystallization of Amorphous In_2O_3 Films during Film Growth

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