Poly-Si Thin Film Transistors Fabricated with Rapid Thermal Annealed Silicon Films

概要

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This letter describes a new process for realization of polysilicon thin-film transitors (TFT) on glass substrates. The process is based on crystallization by rapid thermal annealing of amorphous silicon films deposited by low-pressure chemical vapor deposition (LPCVD). With this technique, the time of crystallization of the silicon films is reduced to a few seconds. Thin-film transistors have been realized using this process, and the field-effect mobility is in the range of 20 cm^2・V^<-1>・s^<-1>.
社団法人応用物理学会の論文
1991-11-15