Laser Deposition of AlN Thin Films on InP and GaAs

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概要

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• Aluminium nitride thin films (〜1000Å) were deposited by pulsed laser (ruby, 3Ons) evaporation on compound semiconductors GaAs and InP for fabrication of metal-insulator-semiconductor (MIS) diodes. The deposition was carried out with a laser energy density of 2.5 J・cm^<-2>at a rate of 10-11Å/pulse at 〜10^<-6> Torr, the substrate temperature being 300 K. Low-angle X-ray diffraction showed the films to have a wurtzite structure. The resistivity of the films was 5×10^<12>Ω-cm with a breakdown field of 1-2×10^6V-cm. The dielectric constant of the films was in the range of 7.5-7.8. A lower value of interface state density was obtained on InP (〜1.8×10^<11>cm^<-2>・eV^<-1>) rather than on GaAs (〜8×10^<11>cm^<-2>・eV^<-1>). These results are compared with earlier studies of laser-deposited BN films on InP.

• 社団法人応用物理学会の論文
• 1991-10-01

著者

• Bhattacharya Pijush

  Semiconductor Division Materials Science Centre Indian Institute Of Technology

• BOSE Dwarka

  Semiconductor Division, Materials Science Centre, Indian Institute of Technology

• Bose Dwarka

  Semiconductor Division Materials Science Centre Indian Institute Of Technology

関連論文

• Laser Deposition of AlN Thin Films on InP and GaAs

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