Non-Alloyed Ge/Pd Contacts for AlAs/GaAs Resonant Tunneling Structures

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概要

• 論文の詳細を見る

• Resonant AlAs/GaAs/AlAs tunneling diodes with very thin top contact layers have been fabricated using non-alloyed Ge/Pd/ n ohmic contacts. The current-voltage characteristics of a set of resonant tunneling diodes that only differed in the thickness of the top contact layer clarify the action range of separate processes taking place during contact formation. Resonant tunneling performance is still observed in structures with contact layers as thin as 10 nm. Device applications that require the contacting of a very thin layer can therefore benefit most from this contact scheme.

• 社団法人応用物理学会の論文
• 1990-09-20

著者

• Borghs G

  Interuniversity Micro‐electronics Center (imec Vzw) Leuven Bel

• Borghs G.

  Interuniversity Micro-electronics Center (imec Vzw)

• HOOF C.

  Interuniversity Micro-Electronics Center

• HOVE M.

  Interuniversity Micro-Electronics Center

• JANSEN P.

  Interuniversity Micro-Electronics Center

• ROSSUM M.

  Interuniversity Micro-Electronics Center

関連論文

• As Grown Stress Free GaAs on Si by Regrowth on Chemically Released GaAs on Si Mesas
• Non-Alloyed Ge/Pd Contacts for AlAs/GaAs Resonant Tunneling Structures

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