Charge Transfer as an Alternative to Metastabilily of Defects in Semi-Insulating GaAs?

概要

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We have compared the variations of different paramagnetic signals, including that of the As_<Ga> -related antisite, as revealed during 1.2 eV light exposures at 4.2 K, with those observed during a subsequent warming up in several semi-insulating GaAs samples. In addition to a confirmation of the sequence of acceptor levels regarding their energy depth, these experiments suggest a possibility of a mere charge transfer mechanism instead of a metastability for the photoquenchable As_<Ga> -related deep donors.
社団法人応用物理学会の論文
1990-09-20