Effects of Ammonia on the Growth of ZnSe by Metalorganic Chemical Vapor Deposition

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概要

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• The electrical and luminescence properties of ZnSe films grown on GaAs(100) substrates by metalorganic chemical vapor deposition in an atmosphere of dilute ammonia have been investigated. The observed properties correlate well with each other. The growth rate R_G and the electron mobility at low temperatures increased markedly. Films with a maximum mobility of more than 10000 cm^2/ (V・s) at 40 K have been obtained at R_G>20 μm/h. It is suggested that active hydrogen produced by the decomposition of ammonia expedites the decomposition of dimethylzinc on the film surface and reduces carbon contamination.

• 社団法人応用物理学会の論文
• 1990-07-20

著者

• Morimoto Keizo

  Research Institute for Advanced Science and Technology, Osaka Prefecture University,

• MORIMOTO Keizo

  Research Institute of University of Osaka Prefecture

関連論文

• Nitrogen Plasma Doping during Metalorganic Chemical Vapor Deposition of ZnSe
• Effects of Ammonia on the Growth of ZnSe by Metalorganic Chemical Vapor Deposition

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