FTO/SnSe Heterojunction for Photovoltaic Conversion

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概要

• 論文の詳細を見る

• FTO/SnSe heterojunctions have been fabricated onto glass substrates. It has been observed that photocurrent shows a maximum around 735 nm. Incident light intensity current characteristics show linearity upto 45 mW・cm^<-2>, beyond which saturation in short circuit current is obtained. An efficiency (η) of about 2% is obtained for these cells.

• 社団法人応用物理学会の論文
• 1990-05-20

著者

• Bedi R

  Solid State Research Laboratory Department Of Physics Guru Nanak Dev University

• Bedi R.

  Solid State Research Laboratory Department Of Physics Guru Nanak Dev University

• SINGH J.

  Solid State Research Laboratory, Department of Physics, Guru Nanak Dev University

• Singh J

  Solid State Research Laboratory Department Of Physics Guru Nanak Dev University

• Singh J.

  Solid State Research Laboratory Department Of Physics Guru Nanak Dev University:(present Address) Material Science Laboratory Dept. Of Applied Physics Thapar Institute Of Engg. & Technology

関連論文

• Thermally Stimulated Currents in Epitaxially Grown Tin Selenide Films
• FTO/SnSe Heterojunction for Photovoltaic Conversion

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