Reduced Pressure MOCVD of C-Axis Oriented BiSrCaCuO Thin Films

概要

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BiSrCaCuO thin films were deposited on MgO(100) single crystal substrates by metalorganic chemical vapor deposition at 500℃ and 2 Torr using fluorinated β-diketonate complexes of Sr, Ca and Cu and triphenylbismuth. An inverted vertical reaction chamber allowed uniform film growth over large areas (7.7 cm diameter). The as-deposited films were amorphous mixtures of oxides and fluorides and a two step annealing protocol (750℃+850-870℃) was developed which gives c-axis oriented films of Bi_2Sr_2Ca_2Cu_2O_x. The post-annealed films showed onsets in the resistive transition of 110 K and zero resistivity was achieved by 83 K. Critical current densities as high as 1.1×10^4A/cm^2 were obtained at 25K.
社団法人応用物理学会の論文
1990-04-20