Optical Activation of Er^<3+> Implanted in Silicon by Oxygen Impurities

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概要

• 論文の詳細を見る

• Luminescence spectra and SIMS measurements of Er-doped silicon are presented in this paper. Luminescence was found to be stronger in Czochralski-grown Si crystals, known to contain up to 10^<18> cm^<-3> of oxygen center. Direct role played by oxygen impurities in the optical activation of the 1.54 μm luminescence was demonstrated by implanting oxygen into Er implanted layers in silicon at concentrations comparable to those of Er. Possible mechanisms of enhancement of photoluminescence are discussed.

• 社団法人応用物理学会の論文
• 1990-04-20

著者

• Salvi M

  Ocm

• Favennec P

  Center National D'etudes Des Telecommunications Lab

• FAVENNEC P.

  Center National d'Etudes des Telecommunications LAB

• MOUTONNET D.

  Center National d'Etudes des Telecommunications LAB

• SALVI M.

  OCM

• GAUNEAU M.

  Center National d'Etudes des Telecommunications LAB

• Gauneau M.

  Center National D'etudes Des Telecommunications Lab

• Moutonnet D.

  Center National D'etudes Des Telecommunications Lab

• FAVENNEC P.

  Center National d'Etudes des Telecommunications LAB

関連論文

• Optical Activation of Er^ Implanted in Silicon by Oxygen Impurities

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