Energetics in Structure Transformation of Ir Clusters on the Ir Surfaces
スポンサーリンク
概要
- 論文の詳細を見る
We report a quantitative study of the energetics in one- to two-dimensional structure transformation of 3-atom Ir atomic clusters on Ir surfaces. On the (111) plane, the temperature dependence of the ratio of the probabilities of observing a 1-D and a 2-D structure exhibits a simple linear Arrhenius behavior. The 2-D structure is more stable and the difference in the cluster binding energies is 0.098±0.004 eV. In contrast, on the (001) plane, the 1-D structure is more stable, and the energy difference is 0.335±0.015 eV. In addition, a significant deviation from the simple linear Arrhenius behavior is found at low temperatures.
- 社団法人応用物理学会の論文
- 1990-03-20
著者
-
Chen C
Department Of Electrical Engineering University Of South Carolina Columbia
-
Tsong T
Academia Sinica Taipei Twn
-
CHEN Chonglin
Physics Department, The Pennsylvania State University
-
TSONG Tien
Physics Department, The Pennsylvania State University
関連論文
- Planar Schottky Diodes on High Quality A-plane GaN
- A New Selective Area Lateral Epitaxy Approach for Depositing a-Plane GaN over r-Plane Sapphire
- Lateral Epitaxial Overgrowth of Fully Coalesced A-Plane GaN on R-Plane Sapphire
- Pulsed Metalorganic Chemical Vapor Deposition of Quaternary AlInGaN Layers and Multiple Quantum Wells for Ultraviolet Light Emission
- Stripe Geometry Ultraviolet Light Emitting Diodes at 305 Nanometers Using Quaternary AlInGaN Multiple Quantum Wells : Semiconductors
- Optically Pumped Lasing at 353nm Using Non-polar a-plane AlGaN Multiple Quantum Wells over r-plane Sapphire
- Energetics in Structure Transformation of Ir Clusters on the Ir Surfaces